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| FDD3690 April 2001 FDD3690 100V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. Features * 22 A, 100 V. RDS(ON) = 64 m @ VGS = 10 V RDS(ON) = 71 m @ VGS = 6 V * Low gate charge (28nC typical) * Fast Switching * High performance trench technology for extremely low RDS(ON) * High power and current handling capability D D G S G D-PAK TO-252 (TO-252) TA=25oC unless otherwise noted S Absolute Maximum Ratings Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @TC=25C Pulsed Power Dissipation @TC=25C @TA=25C @TA=25C (Note 3) (Note 1a) (Note 3) (Note 1a) (Note 1b) Ratings 100 20 22 75 60 3.8 1.6 -55 to +175 Units V V A W TJ, TSTG Operating and Storage Junction Temperature Range C Thermal Characteristics RJC RJA RJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient (Note 1) (Note 1a) (Note 1b) 2.5 40 96 C/W C/W C/W Package Marking and Ordering Information Device Marking FDD3690 Device FDD3690 Reel Size 13'' Tape width 16mm Quantity 2500 units 2001 Fairchild Semiconductor Corp. FDD3690 Rev C(W) FDD3690 Electrical Characteristics Symbol W DSS IAR TA = 25C unless otherwise noted Parameter Single Pulse Drain-Source Avalanche Energy Maximum Drain-Source Avalanche Current Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Gate-Body Leakage, Reverse (Note 2) Test Conditions VDD = 50 V, ID = 5.4 A Min Typ Max Units 175 5.4 mJ A Drain-Source Avalanche Ratings (Note 2) Off Characteristics BVDSS BVDSS TJ IDSS IGSSF IGSSR VGS = 0 V, ID = 250 A 100 78 10 100 -100 V mV/C A nA nA ID = 250 A, Referenced to 25C VDS = 80 V, VGS = 20 V, VGS = -20 V VGS = 0 V VDS = 0 V VDS = 0 V On Characteristics VGS(th) VGS(th) TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance VDS = VGS, ID = 250 A ID = 250 A, Referenced to 25C VGS = 10 V, ID = 5.4 A ID = 5.2 A VGS = 6 V, VGS = 10 V, ID = 5.4 A, TJ = 125C VGS = 10 V, VDS = 5 V VDS = 5 V, ID = 5.4 A 2 2.4 -6.2 44 47 88 4 V mV/C 64 71 135 m ID(on) gFS 20 20 A S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note 2) VDS = 50 V, f = 1.0 MHz V GS = 0 V, 1514 82 44 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 50 V, VGS = 10 V, ID = 1 A, RGEN = 6 11 6.5 29 10 20 15 60 20 39 ns ns ns ns nC nC nC VDS = 50 V, VGS = 10 V ID = 5.4 A, 28 6.2 5.4 Drain-Source Diode Characteristics and Maximum Ratings IS VSD Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0 V, IS = 3.2 A (Note 2) 3.2 0.73 1.2 A V Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) RJA = 40C/W when mounted on a 1in2 pad of 2 oz copper b) RJA = 96C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% PD R DS(ON) 3. Maximum current is calculated as: where PD is maximum power dissipation at TC = 25C and RDS(on) is at TJ(max) and VGS = 10V. Package current limitation is 21A FDD3690 Rev. C(W) FDD3690 Typical Characteristics 35 30 ID, DRAIN CURRENT (A) 25 4.0V 20 15 10 3.5V 5 0 0 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) 5.0V 4.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = 10V 1.6 1.4 VGS = 4.0V 4.5V 1.2 5.0V 6.0V 10V 1 0.8 0 5 10 15 20 25 30 35 ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.15 RDS(ON), ON-RESISTANCE (OHM) 2.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2.4 2.2 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 -50 -25 0 25 50 75 100 o ID = 5.4 A VGS = 10V ID = 2.7 A 0.12 TA = 125oC 0.09 0.06 TA = 25oC 0.03 125 150 175 0 2 3 4 5 6 7 8 9 10 VGS, GATE TO SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE ( C) Figure 3. On-Resistance Variation with Temperature. 35 IS, REVERSE DRAIN CURRENT (A) VDS = 5V 30 ID, DRAIN CURRENT (A) 25 20 15 10 5 TA = -55oC 0 2 2.5 3 3.5 4 4.5 5 VGS, GATE TO SOURCE VOLTAGE (V) 125oC 25oC Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 VGS = 0V 10 1 0.1 0.01 0.001 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD, BODY DIODE FORWARD VOLTAGE (V) TA = 125oC 25o C -55oC Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDD3690 Rev. C(W) FDD3690 Typical Characteristics 10 VGS, GATE-SOURCE VOLTAGE (V) ID = 5.4 A 8 CAPACITANCE (pF) 50 V 6 VDS = 20V 30V 2500 f = 1MHz VGS = 0 V 2000 CISS 1500 4 1000 2 500 CRSS COSS 0 0 5 10 15 20 25 30 Qg, GATE CHARGE (nC) 0 0 10 20 30 40 50 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. 1000 P(pk), PEAK TRANSIENT POWER (W) 100 ID, DRAIN CURRENT (A) RDS(ON) LIMIT 10 1 0.1 0.01 0.001 0.1 1 10 100 1000 VDS, DRAIN-SOURCE VOLTAGE (V) VGS = 10V SINGLE PULSE RJA = 96oC/W TA = 25oC 100s 1ms 10ms 100ms 1s 10s DC 50 Figure 8. Capacitance Characteristics. 40 SINGLE PULSE RJA = 96oC/W TA = 25oC 30 20 10 0 0.01 0.1 1 10 100 1000 t1, TIME (SEC) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 SINGLE PULSE RJA(t) = r(t) + RJA RJA = 96 C/W P(pk) t1 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2 0.01 0.001 0.0001 0.001 0.01 0.1 t1, TIME (sec) 1 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDD3690 Rev. C(W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM DISCLAIMER FAST FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MICROWIRETM OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM PowerTrench QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER SMART STARTTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM UHCTM UltraFET VCXTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H2 |
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